🔗 Ferroelectric RAM

🔗 Computing 🔗 Computing/Computer hardware

Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory.

FeRAM's advantages over Flash include: lower power usage, faster write performance and a much greater maximum read/write endurance (about 10¹⁰ to 10¹⁴ cycles). FeRAMs have data retention times of more than 10 years at +85 °C (up to many decades at lower temperatures). Market disadvantages of FeRAM are much lower storage densities than flash devices, storage capacity limitations and higher cost. Like DRAM, FeRAM's read process is destructive, necessitating a write-after-read architecture.